An Observation of Oxygen Precipitation Retardation Phenomenon Induced by 450°c Anneal in Czochralski Silicon

Two-step (450°C-1000°C) and three-step (1150°C-450°C-1000°C) annealing experiments were carried out to study oxygen precipitation behavior in Czochralski silicon. A distinct retardation of precipitation was observed during the two-step anneal, while the retardation during the three-step anneal was less pronounced. With the three-step anneal, the first high temperature 1150°C anneal in N 2 ambient caused the retardation to occur at shorter nucleation times. The microstructure characteristics as a function of nucleation (450°C) anneal time were similar in the two-step and three-step annealed samples. ~~~*~CzB~~~~m~~m. FJii§~ I¥J J~II 21 *:>z.:P)=~wr (450°C-1000°C)~=~~ (1150°C-450°C-IOOO°C)~1<Jn~*1iJf 5"G Cz li)7~JpqlB~~~fJ~ 0 :fr=m~IB.~epll~~rr1.&~DIB~~~~iwnJ!~ , ?& ffij;fr-&.~t:p $i,~~~~~J:{rr~EJ,§D 0 ;fr=~~.~-~~ 1l50°C IB~m ~1<'~~~~~~~~~;fr~~IB~~~~pq~~ o ft~~~li)7~pqlBmll~~~ ~450 °CIB~~~rlS~ffijC&~ 0 =~W-m~~1<ffijji§::'lBmll~~~450°C~1<~ rlS~IB~1~+£-~fJ;JIB 0 1~.lLt:p~*~.~*~f)!l 2~.lLt:p~*~;Mfl-mUJf5"G~ 22 Journal of Engineering, National Chung Hsing University, Vol. 8, No.2, (1997).